Reduction of crystalline defects to 50/cm2 in epitaxial layers over porous silicon for ELTRAN process

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 13-14

  Sato, N ^a   Ishii, S ^a   Matsumura, S ^a   Ito, M ^a   Nakayama, J ^a   Yonehara, T ^a  

^a CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; EPITAXIAL GROWTH; ETCHING; POROUS SILICON; SEMICONDUCTING FILMS; SILICON WAFERS; STACKING FAULTS;

EPITAXIAL LAYER TRANSFER (ELTRAN) METHOD;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032314369     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)