Improvement of dielectric properties by inserting oxygen-rich initial layer in Pt/(Ba,Sr)TiO3/Pt structure

Integrated Ferroelectrics

Volumn 20, Issue 1-4, 1998, Pages 205-214

  Kwak, Dong Hwa ^a   Lee, Seung Hoon ^a,b   Jang, Byung Tak ^a   Cha, Seon Yong ^a   Lee, Hee Chul ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

(Ba,Sr)TiO3 film; Capacitor model; Dielectric constant; Initial oxygen rich layer; Low dielectric transition layer

Indexed keywords

BARIUM COMPOUNDS; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); PERMITTIVITY; PLATINUM; SILICA; SILICON; SPUTTER DEPOSITION;

BARIUM STRONTIUM TITANATE;

DIELECTRIC FILMS;

EID: 0032314275     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808238781     Document Type: Article

References (13)

1. Horiguchi, M. et al. (1995). ISSCC Digest of Technical Papers, p. 252.
2. Sugibayashi, T. et al. (1995). ISSCC Digest of Technical Papers, p. 254.
3. Yuuki, A. et al. (1995). IEDM Technical Digest, p. 115.
4. Shinriki, H., Nakata, M., Nishioka, Y. and Mukai, K. (1989). IEEE Electron Device Lett., 10, 514.
5. Ohji, Y. et al. (1995). IEDM Technical Digest, p. 111.
6. Ichinose, N. and Ogiwara, T. (1993). Jpn. J. Appl. Phys., 32, 4115.
7. Horikawa, T., Mikami, N., Kataoka, M. et al. (1993). Jpn. J. Appl. Phys., 32, 4126.
8. Bhattacharya, P., Park, K. H. and Nishioka, Y. (1994). Jpn. J. Appl. Phys., 33, 5231.
9. Fukuda, Y., Aoki, K., Numata, K. and Nishimura, A. (1994). Jpn. J. Appl. Phys., 33, 5255.
10. Takada, M. (1993). SSDM, 93, 874-876.
11. Koyama, K. (1991). IEDM 91, Technical Digest, pp. 823-826.
12. Amanuma, K., Mon, T., Hase, T., Sakuma, T., Ochi, A. and Miyasaka, Y. (1993). Jpn. J. Appl. Phys., 32, 4150.
13. Lee, W. J. (1995). Ph.D. Thesis, KAIST, Korea, pp. 138-139.