Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

Superlattices and Microstructures

Volumn 24, Issue 4, 1998, Pages 299-303

  Bairamov, B H ^a,b   Aydinli, A ^a   Tanatar, B ^a   Guven, K ^a   Gurevich, S ^b   Mel'tser, B Ya ^b   Ivanov, S V ^b   Kop'ev, P S ^b   Smirnitskii, V B ^b   Timofeev, F N ^b  

^a BILKENT UNIVERSITY   (Turkey)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Confined phonons; Quantum wires

Indexed keywords

CRYSTALLINE MATERIALS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; ENDERLEIN THEORY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032313311     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0259     Document Type: Article

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