Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation

Materials Research Society Symposium - Proceedings

Volumn 526, Issue , 1998, Pages 305-310

  Sharma, A K ^a   Dovidenko, K ^a   Oktyabrsky, S ^a   Moxey, D E ^a   Muth, J F ^a   Kolbas, R M ^a   Narayan, J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DISLOCATIONS (CRYSTALS); FILM GROWTH; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; STACKING FAULTS; STOICHIOMETRY; ZINC OXIDE;

PULSED LASER DEPOSITION (PLD);

SEMICONDUCTING FILMS;

EID: 0032312846     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-526-305     Document Type: Conference Paper

References (14)