Single mode and stable polarization InGaAs/GaAs surface emitting laser grown on GaAs (311)B substrate

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1998, Pages 233-234

  Nishiyama, N ^a   Mizutani, A ^a   Hatori, N ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT POLARIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032312296     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)