Critical length and resistance saturation effects in Al(Cu) interconnects

Materials Research Society Symposium - Proceedings

Volumn 516, Issue , 1998, Pages 231-236

  Gall, M ^a   Muller, J ^a   Jawarani, D ^a   Capasso, C ^a   Hernandez, R ^a   Kawasaki, H ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTROMIGRATION; FAILURE ANALYSIS; MATHEMATICAL MODELS; METALLIZING;

DRIFT VELOCITY PHENOMENA; INTERCONNECTS; RESISTANCE SATURATION EFFECT;

SEMICONDUCTOR MATERIALS;

EID: 0032311986     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-516-231     Document Type: Conference Paper

References (9)