High pressure study of III-nitrides and related heterostructures

Materials Research Society Symposium - Proceedings

Volumn 499, Issue , 1998, Pages 361-370

  Shan, W ^a   Ager III, J W ^a   Walukiewicz, W ^a   Haller, E E ^a   Little, B D ^a   Song, J J ^a   Goldenberg, B ^a   Fengs, Z C ^a   Schurman, M ^a   Stall, R A ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ENERGY GAP; EXCITONS; HETEROJUNCTIONS; HYDROSTATIC PRESSURE; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

DIAMOND-ANVIL-CELL TECHNIQUES; NEAR-BAND-EDGE LUMINESCENCE EMISSIONS;

NITRIDES;

EID: 0032311832     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)