`Very high voltage integration' in SOI based on a new floating channel technology

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 59-60

  Plikat, Robert ^a   Silber, Dieter ^a   Wondrak, Wolfgang ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC INSULATING MATERIALS; ELECTRIC POTENTIAL; ELECTRIC SHIELDING; ELECTRIC SPACE CHARGE; ELECTROSTATICS; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR JUNCTIONS;

FLOATING CHANNEL TECHNOLOGY; VERY HIGH VOLTAGE INTEGRATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032311576     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)