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Volumn 2, Issue , 1998, Pages 1061-1066
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Advanced technology for a new NPT-IGBT module design
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC LOSSES;
RELIABILITY;
SEMICONDUCTOR DEVICE MANUFACTURE;
STRESS ANALYSIS;
NON-PUNCH-THROUGH-INSULATED GATE BIPOLAR TRANSISTOR (NPT-IGBT);
BIPOLAR TRANSISTORS;
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EID: 0032309839
PISSN: 01972618
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (1)
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