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Volumn 516, Issue , 1998, Pages 89-94
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Electromigration-induced drift in damascene vs. conventional interconnects: An intrinsic difference
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTROMIGRATION;
METALLIZING;
SEMICONDUCTING ALUMINUM COMPOUNDS;
DAMASCENE;
SEMICONDUCTOR DEVICE TESTING;
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EID: 0032309669
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-516-89 Document Type: Conference Paper |
Times cited : (5)
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References (17)
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