Dislocation pattern formation in epitaxial structures based on SiGe alloys

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 112-115

  Yugova, T G ^a   Vdovin, V I ^b   Mil'vidskii, M G ^b   Orlov, L K ^c   Tolomasov, V A ^c   Potapov, A V ^c   Abrosimov, N V ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Inst Chem Prob of Microlectron   (Russian Federation)

^c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Films; Generation mechanisms; Misfit dislocations; SiGe alloys

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

NOMARSKI MICROSCOPY;

HETEROJUNCTIONS;

EID: 0032309359     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01304-2     Document Type: Article

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