Temperature dependence of the electron and hole scattering mechanisms in silicon analyzed through a full-band, spherical-harmonics solution of the BTE

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 361-365

  Reggiani, Susanna ^a,b   Vecchi, Maria Cristina ^a,b,c,d   Rudan, Massimo ^a,c,e  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b University of Bologna ^*

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d ETH ZURICH   (Switzerland)

^e Faculty of Engineering   (Italy)

Author keywords

Boltzmann equation; Carrier mobility; Scattering mechanisms; Spherical harmonics expansion

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRON SCATTERING; HARMONIC ANALYSIS; THERMAL EFFECTS;

BOLTZMANN EQUATION; SOFTWARE PACKAGE HARM; SPHERICAL-HARMONICS EXPANSION (SHE);

SEMICONDUCTING SILICON;

EID: 0032309042     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/41638     Document Type: Article

References (6)

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