Si-gate transfer mold FEAs for a study of the possibility of high-voltage switching

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 1998, Pages 144-145

  Sakai, Tadashi ^a   Ono, Tomio ^a   Sakuma, Naoshi ^a   Nakayama, Kazuya ^a   Ohashi, Hiromichi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOSSES; ELECTRON EMISSION; ETCHING; SEMICONDUCTING SILICON; TRANSFER MOLDING; VACUUM APPLICATIONS;

HIGH-VOLTAGE SWITCHING; VACUUM MICROELECTRONICS;

FIELD EMISSION CATHODES;

EID: 0032308993     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)