Photodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique

Radiation Effects and Defects in Solids

Volumn 146, Issue 1-4, 1998, Pages 199-206

  Messias, Fábio R ^a   Scalvi, Luis V A ^b   Li, M Siu ^a   Santilli, C V ^b   Pulcinelli, S H ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

Optical absorption; Oxygen vacancy; Photoconductivity; Tin dioxide; Traps; Wide gap semiconductor

Indexed keywords

ACTIVATION ENERGY; BOROSILICATE GLASS; COATING TECHNIQUES; DESORPTION; ELECTRIC CONDUCTANCE; HEATING; MASS SPECTROMETERS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR GROWTH; SOL-GELS; THIN FILMS; ULTRAVIOLET RADIATION;

ELECTRON TRAPPING; PHOTODESORPTION; SOL-GEL DIP-COATING TECHNIQUES;

SEMICONDUCTING FILMS;

EID: 0032308896     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159808220291     Document Type: Article

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