A way to improve dose rate laser simulation adequacy

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2659-2664

  Skorobogatov, P K ^a   Nikiforov, A Y ^a   Demidov, A A ^a  

^a Specialized Electronic Systems   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAM EFFECTS; METALLIZING; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTING SILICON;

DOSE RATE LASER SIMULATION;

INTEGRATED CIRCUITS;

EID: 0032308204     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736511     Document Type: Article

References (24)

1. D.H.Habing, " Use of Laser to Simulate Radiation - induced Transients in Semiconductors and Circuits", IEEE Trans. Nucl. Sei, Vol. NS-12, No.6, p.91-100, December 1965.
2. T.D.Ellis, Y.D.Kim, " Use of a Pulsed Laser as an Aid to Transient Upset Testing of I2L LSI Microcircuits", IEEE Trans. Nue. Sci. , Vol. NS-25, No.6, p.1489 - 1493, December 1978.
3. T.J.Stultz, J.L.Crowley, F.A.Junda, " An Investigation of the Transient Ionizing Radiation Response of Diffused Resistors Using a Pulsed Laser", IEEE Trans. Nucl, Sci. , Vol. NS-27, No.5, p. 1362 - 1367, October 1980.
4. E.E.King, B.Ahlport, G.Tettemer, K.Mulker, P.Linderman, " Transient Radiation Screening of Silicon Devices Using Backside Laser Irradiation", IEEE Trans. Nucl. Sci. , Vol. NS-29, No.6, p.1809 - 1815, December 1982.
5. E.E.King, G.L.Tettemer, P.B.Linderman, P.E.Micheletty, " The Hardness Assurance Wafer Probe - HAWP", IEEE Trans. Nucl. Sci. , Vol. NS-30, No.6, p.4345 - 4350, December 1983.
6. M.N.Hardman, A.R.Edwards, " Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor Devices", IEEE Trans. Nucl. Sci., Vol. NS-31, No.6, p.1406 - 1410, December 1984.
7. A.H.Johnston, MP.Bazc, " Mechanisms for the Latchup Window Effects in Integrated Circuits", IEEE Trans. Nucl. Sci. , Vol. NS-32, No.6, p.4018 - 4025, December 1985.
8. A.H.Johnston, M.P.Baze, " Experimental Methods for Determining Latchup Paths in Integrated Circuits", IEEE Trans. Nucl. Sci. , Vol.NS-32, No.6, p.4260 - 4265. December 1985.
9. M.P.Baze, A.H.Johnston. "Latchup Paths in Bipolar Integrated Circuits", IEEE Trans. Nucl. Sci. , Vol. NS-33, No.6, p. 1499-1504, December 1986.
10. W.D.Raburn, S.RBuchner, K.Kang, R.Singh, S.Sayers, " Comparison of Threshold Transient Upset Levels Induced by Flash XRays and Pulsed Lasers", IEEE Trans. Nucl. Sci. , Vol. NS-35, No.6, p.1512 - 1516, December 1988,
11. A.H.Johnston, " Charge Generation and Collection in p-n Junctions Excited with Pulsed Infrared Lasers", IEEE Trans. Nucl. Sci. , Vol. NS-40, No.6, p. 1694 - 1702, December 1993.
12. J.S.Melinger, S.Buchner, D.McMorrow, W.J.Stapor, T.R.Weatherford, A,B.Campbell, " Critical Evaluation of the Pulsed Laser Method for Single Event Effects Testing and Fundamental Studies", IEEE Trans. Nucl. Sci. Vol. NS-41, No.6, p.2574 - 2584, December 1994.
13. A.Y.Nikiforov, I.V.Poljakov, " Test CMOS/SOS RAM for Transient Radiation Upset Comparative Research And Failure Analysis", IEEE Trans. Nucl. Sa., Vol. NS-42, No.6, p. 2138-2142, December 1995.
14. A.Y.Nikiforov, A.I.Chumakov, P.K.Skorobogatov "CMOS IC Transient Radiation Effects Investigations, Model Verification and Parameter Extraction With the Test Structures Laser Simulation Tests" in Proceedings of the International Conference on Microelectronics Test Structures ICMTS 1996, Trente, Italy, March 1996, pp. 253-258.
15. A.I.Chumakov, D.V.Gromov, O.A.Kalashnikuv, A.Y.Nikiforov, A.I.Sheremetyev, P.K.Skorobogatov, V.A.Telets and A.V.Yanenko "Specialized Simulation Test System for Microelectronic Devices Radiation Hardness Investigation and Failure Prediction", Proc. of the Second Workshop on Electronics for LHC Experiments. 1996, p. 428-432.
16. A.I.Chumakov, A.N.Egorov, O.B.Mavritsky, A.Y.Nikiforov, A.V.Yanenko, " Single Event Lalchup Threshold Estimation Based on Laser Dose Rate Test Results", IEEE Trans. Nuc. Sci. , Vol. NS-44, No.6, (1997), p.2034-2039
17. A.Y.Nikiforov, V.N.Guminov, V.A.Telets "Radiation Hard Bulk CMOS ROM Dose Rate Upset Detailed Analysis Technique and Results", in 7997 IEEE Radiation Effects Data Workshop Record, Snowmass Village, Colorado, July 24, 1997, pp. 44-47.
18. A.Y.Nikiforov, V.V.Baykov, V.S.Figurov, A.I.Chumakov, P.K.Skorobogatov, V.A.Telets "Latch-up Windows Tests in High Temperature Range", in Proceedings of the 4th Europ. Conf. "Radiations and Their Effects on Devices and Systems, Cannes, France, Sept. 15-19, 1997, pp.118-G20.
19. MJonsson, S.Mattsson, " Transient Radiation Response of VLSI Circuits: Shadowing Effects and Pulse Widths Dependence in Laser" IEEE Trans. Nucl. Sci. , Vol. NS-38, No.6, p. 1429-1433, December 1991.
20. A.Y.Nikiforov, P.K.Skorobogatov, ''Dose Rate Laser Simulation Tests Adequacy: Shadowing and High Intensity Effects Analysis", IEEE Trans. Nuc. Sci. , Vol. NS-43, No.6, p.3115-3121, December 1996.
21. A.Y. Nikiforov, P.K.Skorobogatov, B.A.Ahabaev "Laser Simulation Adequacy of Dose Rate Induced Latch-up", in Proceedings of the 4th Europ. Conf. "Radiations and Their Effects on Devices and Systems, Cannes, France, Sept. 15-19, 1997, pp.121-123.
22. A.Y.Nikiforov, O.B.Mavritsky, A.N.Egorov, V.S.Figurov, V.A.Telets P.K.Skorobogatov, S.A.Poievich "RADON-5E" Portable Pulsed Laser Simulator: Description, Qualification Technique and Results, Dosimetry Procedure", in 1996 IEEE Radiation Effects Data Workshop Record, Indian Wells, July 15-19, 1996, pp. 49-54.
23. A.Y.Nikiforov, P.K.Skorobogatov, A.V.Artamonov, V.A.Telets, V.S.Figurov and S.A.Poievich "Comparative Transient Simulation and Radiation Tests of Multichip Diode Bridge Circuits" in Proceedings of the Third Workshop on Electronics for LHC Experiments, London, Great Britain, Sept. 22-26, 1997, pp.512-516.
24. A.Y.Nikiforov, O.B.Mavritsky, A.N.Egorov, A.I.Chumakov "Upgrade Design Versions of "RADON-5EM" Laser Simulator", in Proceedings of the 4th Europ. Conf. "Radiations and Their Effects on Devices and Systems", Cannes, France, Sept. 15-19, 1997, pp.G18-G20.