Failure mode analysis of a 0.25 μm CMOS technology by scanning electron and ion beams

Solid State Phenomena

Volumn 63-64, Issue , 1998, Pages 433-442

  Kruger D ^a   Rosenkranz, R ^b   Tippelt, B ^b   Kuhnert, M ^b   Griessbach K ^b   Lamprecht, A ^b   Hennecke, S ^c  

^a IHP   (Germany)

^b SIEMENS AG   (Germany)

^c NONE

Author keywords

0.25 m Technology; CMOS; Failure Mode Analysis; FIB; Interfacial Layers; SEM

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ETCHING; FAILURE ANALYSIS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); ION BEAMS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

FOCUSED ION BEAM (FIB) METHOD; PHYSICAL FAILURE MODE ANALYSIS;

CMOS INTEGRATED CIRCUITS;

EID: 0032307542     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.63-64.433     Document Type: Article

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