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Volumn 146, Issue 1-4, 1998, Pages 187-197

Optical characterization of GaAs/AlAs multiple quantum wells interfaces

Author keywords

Interface structure; Multiple quantum wells; Photoluminescence; Photoluminescence excitation, GaAs AlAs

Indexed keywords

COMPUTATIONAL METHODS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

EID: 0032307442     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159808220290     Document Type: Article
Times cited : (4)

References (24)
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  • 9
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    • D. Bimberg, D.E. Mars, J.N. Miller, R. Barna and D. Oertel, J. Vac. Sci. Technol. B 4, 1014 (1996); D. Bimberg, J. Christen, T. Fukunaga, H. Nakajima, D.E. Mars, J.N. Miller, M. Tanaka and H. Sakoki, J. Cryst. Growth 81, 153 (1987); R. Köhrbrück, A Munnix, D. Bimberg , D.E. Mars and J.N Miller, Appl. Phys. Lett. 57, 1025 (1990).
    • (1996) J. Vac. Sci. Technol. B , vol.4 , pp. 1014
    • Bimberg, D.1    Mars, D.E.2    Miller, J.N.3    Barna, R.4    Oertel, D.5
  • 11
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    • D. Bimberg, D.E. Mars, J.N. Miller, R. Barna and D. Oertel, J. Vac. Sci. Technol. B 4, 1014 (1996); D. Bimberg, J. Christen, T. Fukunaga, H. Nakajima, D.E. Mars, J.N. Miller, M. Tanaka and H. Sakoki, J. Cryst. Growth 81, 153 (1987); R. Köhrbrück, A Munnix, D. Bimberg , D.E. Mars and J.N Miller, Appl. Phys. Lett. 57, 1025 (1990).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.