Optical characterization of GaAs/AlAs multiple quantum wells interfaces

Radiation Effects and Defects in Solids

Volumn 146, Issue 1-4, 1998, Pages 187-197

  Lemos, V ^a   Sergio C S ^a   Lima, A Pimenta ^b   Quivy, A A ^b   Enderlein, R ^b   Leite, J R ^b   Carvalho Jr , W ^c  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c CPqD Telecom and IT Solutions   (Brazil)

Author keywords

Interface structure; Multiple quantum wells; Photoluminescence; Photoluminescence excitation, GaAs AlAs

Indexed keywords

COMPUTATIONAL METHODS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

PHOTOLUMINESCENCE EXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032307442     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159808220290     Document Type: Article

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