Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 12-13

  Tiwari, Sandip ^a   Welser, J J ^a   DiMaria, D J ^a   Rana, F ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CURRENT DENSITY; DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ENERGY GAP; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROSCOPY;

GATE TO DRAIN CURRENT INJECTION; STRESS INDUCED LEAKAGE CURRENT MEASUREMENT; SURFACE POTENTIALS; TUNNELING OXIDE;

MOSFET DEVICES;

EID: 0032307139     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)