Study of substrate diffusion in epitaxial N-type CdSe films grown on GaAs (001) by pulsed laser ablation

Materials Research Society Symposium - Proceedings

Volumn 526, Issue , 1998, Pages 27-32

  Park, Jaewon ^a   Rouleau, Christopher M ^a   Lowndes, Douglas H ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; FLUORESCENCE; INTERDIFFUSION (SOLIDS); LASER ABLATION; PULSED LASER APPLICATIONS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

AUGER DEPTH PROFILING; CADMIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0032306657     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-526-27     Document Type: Conference Paper

References (19)