Hydrogen annealing treatment used to obtain high quality SOI surfaces

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 37-38

  Moriceau, H ^a   Cartier, A M ^a   Aspar, B ^a   Maleville, C ^a   Barge, T ^a   Auberton, A J ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; HYDROGEN; SILICON WAFERS; SURFACE PHENOMENA; THERMAL EFFECTS;

SURFACE MICRODEFECTS (SMD); SURFACE REGION MICRODEFECTS (SRMD);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032305893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)