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Volumn 24, Issue 6, 1998, Pages 427-432

Influence of ion beam irradiation on crystallographic structure and surface morphology of aluminium nitride thin films

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CERAMIC MATERIALS; CRYSTAL STRUCTURE; ION BEAMS; ION BOMBARDMENT; MORPHOLOGY; NITROGEN; RADIATION EFFECTS; SURFACES; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION;

EID: 0032305442     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0272-8842(97)00031-X     Document Type: Article
Times cited : (8)

References (14)
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    • (1992) Jap. J. Appl. Phys. , vol.31 , pp. 3017-3020
    • Okano, H.1    Tanaka, T.2    Shibata, K.3    Nakano, S.4
  • 3
    • 0027667941 scopus 로고
    • GHz-band surface acoustic wave devices using aluminum nitride thin films deposited by electron cyclotron resonance dual ion-beam sputtering
    • OKANO, H., TANAKA, N., SHIBATA, K. & NAKANO, S., GHz-band surface acoustic wave devices using aluminum nitride thin films deposited by electron cyclotron resonance dual ion-beam sputtering. Jap. J. Appl. Phys., 32 (1993) 4052-4056.
    • (1993) Jap. J. Appl. Phys. , vol.32 , pp. 4052-4056
    • Okano, H.1    Tanaka, N.2    Shibata, K.3    Nakano, S.4
  • 4
    • 0028423234 scopus 로고
    • Characteristics of AlN thin films deposited by electron cyclotron resonance dual-ion-beam sputtering and their application to GHz-band surface acoustic wave devices
    • OKANO, H., TANAKA, N., HIRAO, Y., KOBAYASHI, Y., SHIBATA, K. & NAKANO, S., Characteristics of AlN thin films deposited by electron cyclotron resonance dual-ion-beam sputtering and their application to GHz-band surface acoustic wave devices. Jap. J. Appl. Phys., 33 (1994) 2957-2961.
    • (1994) Jap. J. Appl. Phys. , vol.33 , pp. 2957-2961
    • Okano, H.1    Tanaka, N.2    Hirao, Y.3    Kobayashi, Y.4    Shibata, K.5    Nakano, S.6
  • 5
    • 0028510155 scopus 로고
    • Preparation of aluminum nitride epitaxial films by electron cyclotron resonance dual-ion-beam sputtering
    • TANAKA, N., OKANO, H., USUKI, T. & SHIBATA, K., Preparation of aluminum nitride epitaxial films by electron cyclotron resonance dual-ion-beam sputtering. Jap. J. Appl. Phys., 33 (1994) 5249-5254.
    • (1994) Jap. J. Appl. Phys. , vol.33 , pp. 5249-5254
    • Tanaka, N.1    Okano, H.2    Usuki, T.3    Shibata, K.4
  • 7
    • 0028457126 scopus 로고
    • Amorphous or nanocrystalline AlN thin films formed from AlN:H
    • WANG, X. D., HIPPS, K. W., DICKINSON., J. T. & MAZUR, U., Amorphous or nanocrystalline AlN thin films formed from AlN:H. J. Mater. Res., 9 (1994) 1449-1455.
    • (1994) J. Mater. Res. , vol.9 , pp. 1449-1455
    • Wang, X.D.1    Hipps, K.W.2    Dickinson, J.T.3    Mazur, U.4
  • 8
    • 0346561141 scopus 로고
    • Morphology and orientation of nanocrystalline AlN thin films
    • WANG, X. D., JIANG, W., NORTON, M. G. & HIPPS, K. W., Morphology and orientation of nanocrystalline AlN thin films. Thin Solid Films, 251 (1994) 121-126.
    • (1994) Thin Solid Films , vol.251 , pp. 121-126
    • Wang, X.D.1    Jiang, W.2    Norton, M.G.3    Hipps, K.W.4
  • 9
    • 0028671195 scopus 로고
    • Synthesis of aluminium nitride thin films by ion-vapour deposition method
    • NAKAMURA, Y., WATANABE, Y., HIRAYAMA, S. & NAOTA, Y. , Synthesis of aluminium nitride thin films by ion-vapour deposition method. Surf. Coat. Technol., 68/69 (1994) 203-207.
    • (1994) Surf. Coat. Technol. , vol.68-69 , pp. 203-207
    • Nakamura, Y.1    Watanabe, Y.2    Hirayama, S.3    Naota, Y.4
  • 10
    • 0029479895 scopus 로고
    • AFM study of surface morphology of aluminum nitride thin films
    • Pittsburgh, USA, ed. H. A. Atwater, J. T. Dickinson, D. H. Lowndes & A. Polman. Materials Research Society, Boston, USA
    • WATANABE, Y., NAKAMURA, Y., HIRAYAMA, S. & NAOTA, Y., AFM study of surface morphology of aluminum nitride thin films. In Materials Research Society Proceedings, Vol. 388, Pittsburgh, USA, ed. H. A. Atwater, J. T. Dickinson, D. H. Lowndes & A. Polman. Materials Research Society, Boston, USA, 1995 pp. 399-404.
    • (1995) Materials Research Society Proceedings , vol.388 , pp. 399-404
    • Watanabe, Y.1    Nakamura, Y.2    Hirayama, S.3    Naota, Y.4
  • 11
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    • Effect of ion beam energy on the synthesis of oriented aluminium nitride thin films
    • NAKAMURA, Y., WATANABE, Y., HIRAYAMA, S. & NAOTA, Y., Effect of ion beam energy on the synthesis of oriented aluminium nitride thin films. Surf. Coat. Technol., 76/77 (1995) 337-340.
    • (1995) Surf. Coat. Technol. , vol.76-77 , pp. 337-340
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  • 13
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    • EDGAR, J. H., CAROSELLA, C. A., EDDY JR, C. R. & SMITH, D. T., Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition. J. Mater. Sci.: Materials in Electronics, 7 (1996) 247-253.
    • (1996) J. Mater. Sci.: Materials in Electronics , vol.7 , pp. 247-253
    • Edgar, J.H.1    Carosella, C.A.2    Eddy C.R., Jr.3    Smith, D.T.4
  • 14
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    • AlN thin films with controlled crystallographic orientations and their microstructure
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.