Dielectric breakdown, negative resistivity, depletion widths and the role of Bi in Strontium Bismuth Tantalate (SBT) devices

Integrated Ferroelectrics

Volumn 19, Issue 1-4, 1998, Pages 85-93

  Scott, J F ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Bismuth; Memories; SBT

Indexed keywords

BISMUTH; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRODES; FERROELECTRIC DEVICES; INTERFACES (MATERIALS); NEGATIVE RESISTANCE; PLATINUM; STRONTIUM COMPOUNDS;

BARIUM STRONTIUM TITANATE; FERROELECTRIC FILMS; NEGATIVE DIFFERENTIAL RESISTIVITY; STRONTIUM BISMUTH TANTALATE;

DIELECTRIC FILMS;

EID: 0032304823     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808012696     Document Type: Article

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