Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers

Journal of the European Ceramic Society

Volumn 18, Issue 14, 1998, Pages 2217-2226

  Feltz, Adalbert ^a   Gamsjäger, Ernst ^b  

^a EPCOS AG   (Germany)

^b Steinel AG   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY MEASUREMENT; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; THICK FILMS; THIN FILMS;

OXYGEN VACANCY DEFECTS; SEMICONDUCTOR PROPERTIES;

CERAMIC MATERIALS;

EID: 0032304409     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(98)00160-5     Document Type: Article

References (29)

1. 3. J. Phys. Chem. Solids. 28:1976;403.
2. 3 single crystals. Solid State Commun. 18:1976;1223.
3. 3. Z. Phys. Chem. 84:1973;325.
4. 3. Proc. Inst. Nat. Sci. Nihon Univ., Tokyo. 9:1974;29.
5. Fleischer, M. and Meixner, H., Sensor zur Erfassung reduzierender Gase. Europ. Patent 90 11 27 81.1, 1990.
6. 3 thin films. Proc. 3rd Int. Meet. Chemical Sensors, Cleveland, OH, 1990, p. 201.
7. Fleischer M., Meixner H. Gallium oxide thin films: a new material for high-temperature oxygen sensors. Sensors and Actuators B. 4:1991;437.
8. Fleischer M., Hanrieder W., Meixner H. Stability of semiconducting gallium oxide thin films. Thin Solid Films. 190:1990;93.
9. 3 thin-film systems. Appl. Phys. A54:1992;560.
10. 3 for reducing gases. Sensors and Actuators. B18-19:1994;119.
11. 3 thin films. J. Mater. Sci. Lett. 11:1992;1728.
12. 3. J. Chem Phys. 33:1960;676.
13. 3 thin films. Sensors and Actuators. B6:1992;277.
14. 3 sensors for reducing gases. Sensors and Actuators. B13-14:1993;259.
15. 3. Sensors and Actuators. B17:1994;187.
16. 3 thin films based on temperature switching of multigas reactions. Proc. 5th Int. Meeting Chemical Sensors, Rome 1994. Sensors and Actuators. B25:1995;544.
17. 2. Sensors and Actuators. B18-19:1994;573.
18. 3 thin films. Sensors and Actuators. B8:1992;115.
19. 3. J. Appl. Phys. 74:1993;300.
20. Hahn H., Frank G. Über die Kristallstruktur des GaS. Z. anorg. allg. Chem. 278:1955;340.
21. Garton D., Powell H.M. The crystal structure of Gallium Dichloride. J. Inorg. Nucl. Chem. 4:1957;84.
22. Anderson P.W. Model for the Electronic structure of amorphous semiconductors. Phys. Rev. Lett. 34:1975;953.
23. Kröger, F. A., and Vink, H. J., In Relations between the concen-trations of imperfections in crystalline solids, ed. F. Seitz and D. Turnbull. Solid State Physics, Vol. 3. Academic Press, New York, 1956, pp. 307435.
24. Lide, D.R., (ed.), Handbook of Chemistry and Physics, 79th edn. 1988-1999, pp. 5-16, CRC Press, Boca Raton, London, New York, Washington, D.C.
25. Kröger, F. A., The Chemistry of Imperfect Crystals. North Holland Publishing Company, Amsterdam, 1964.
26. Samson S., Fonstadt C.G. Defect structure and electronic donor levels in stannic oxide crystals. J. Appl. Phys. 44:1973;4618.
27. Maier J., Göpel W. Investigations of the bulk defect chemistry of polycrystalline Tin(IV) oxide. J. Solid State Chem. 72:1988;293.
28. Fonstadt C.G., Rediker R.H. Electrical properties of high-quality stannic oxide crystals. J. Appl. Phys. 42:1971;2911.
29. 2. Proc. Transducers 97, Chicago, 1997, p. 955.