Oxide mediated epitaxy on planar and non-planar Si

Materials Research Society Symposium - Proceedings

Volumn 514, Issue , 1998, Pages 427-432

  Tung, R T ^a   Howard, D J ^a   Ohmi, S ^a   Caymax, M ^a   Maex, K ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; OXIDES; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THICKNESS MEASUREMENT;

EPITAXIAL ORIENTATION; OXIDE MEDIATED EPITAXY; SHALLOW JUNCTION SILICIDATION;

SEMICONDUCTING SILICON;

EID: 0032304232     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-514-427     Document Type: Conference Paper

References (7)