Temperature measurements by optical pyrometry during the epitaxial growth of semiconductors

EPJ Applied Physics

Volumn 4, Issue 2, 1998, Pages 227-233

  Leveque G ^a   Nouaoura, M ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED RADIATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PYROMETRY; SEMICONDUCTING FILMS; TEMPERATURE MEASUREMENT; THIN FILMS;

OPTICAL PYROMETRY;

SEMICONDUCTOR GROWTH;

EID: 0032303988     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1998264     Document Type: Article

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