Electrical resistivity and optical band gap of doped Bi2Te3 single crystals

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3316, Issue 2, 1998, Pages 1174-1176

  Desai, C F ^a   Soni, P H ^a  

^a M S UNIVERSITY OF BARODA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANTIMONY; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; LIGHT ABSORPTION; SELENIUM; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS; TIN;

ABSORPTION COEFFICIENT; BISMUTH ANTIMONIDE TELLURIDE; BISMUTH SELENIDE TELLURIDE; BISMUTH TIN TELLURIDE; FOUR PROBE METHOD; WAVE NUMBERS;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0032302710     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)