Travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 403-406

  Moerl, L ^a   Bornholdt, C ^a   Hoffmann, D ^a   Matzen, K ^a   Mekonnen, G G ^a   Reier, F W ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRODES; LIGHT MODULATORS; LIGHT POLARIZATION; MULTIPLEXING EQUIPMENT; OPTICAL SWITCHES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TIME DIVISION MULTIPLEXING;

ALUMINUM INDIUM ARSENIDE; DEMULTIPLEXER; GALLIUM INDIUM ARSENIDE; MACH-ZEHNDER INTERFEROMETER; OPTICAL TIME DIVISION MULTIPLEXING; TRAVELLING WAVE ELECTRODE; TUNNELING BARRIER QUANTUM WELL;

INTERFEROMETERS;

EID: 0032302559     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)