Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 135-138

  Pan, Z ^a   Miyamoto, T ^a   Schlenker, D ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

DIMETHYLYDRAZINE; HIGH RESOLUTION X RAY DIFFRACTION; LOW PRESSURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION; TERTIARYBUTYLARSINE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032302405     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)