Time-dependent reliability of the interface between A-C:F and inorganic dielectrics

Materials Research Society Symposium - Proceedings

Volumn 511, Issue , 1998, Pages 365-370

  Endo, Kazuhiko ^a   Shinoda, Keisuke ^a   Tatsumi, Toru ^a   Matsubara, Yoshihisa ^a   Iguchi, Manabu ^a   Horiuchi, Tadahiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DIELECTRIC MATERIALS; FILM GROWTH; FLUOROCARBONS; HYDROLYSIS; INTEGRATED CIRCUIT MANUFACTURE; LSI CIRCUITS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON NITRIDE;

FLUORINATED AMORPHOUS CARBON; TIME DEPENDENT RELIABILITY;

INTERFACES (MATERIALS);

EID: 0032301796     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-511-365     Document Type: Conference Paper

References (9)