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Volumn 514, Issue , 1998, Pages 207-212
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Mechanism of narrow line effect in TiSi2 films on highly As-doped diffusion layers
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ARSENIC;
DIFFUSION;
GRAIN SIZE AND SHAPE;
ION IMPLANTATION;
METALLIC FILMS;
OXYGEN;
SILICON WAFERS;
SPUTTER DEPOSITION;
TRANSMISSION ELECTRON MICROSCOPY;
NARROW LINE EFFECT;
TITANIUM SELF ALIGNED SILICIDE;
TITANIUM COMPOUNDS;
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EID: 0032300957
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-514-207 Document Type: Conference Paper |
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Times cited : (1)
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References (9)
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