High-efficient dual-junction InGaP/GaAs solar cells with improved tunnel interconnect

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 203-206

  Agui, T ^a   Takamoto, T ^a   Ikeda, E ^a   Kurita, H ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TUNNEL JUNCTIONS;

LATTICE MISMATCH; PHOTOLUMINESCENCE PEAK; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 0032300413     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)