Photoelastic characterization of residual strain in MWA SI InP crystal wafers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 537-540

  Fukuzawa, M ^a   Herms, M ^a   Uchida, M ^a   Oda, O ^a   Yamada, M ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; PHOTOELASTICITY; POLARISCOPES; STRAIN;

MULTIPLE WAFER ANNEALING; RESIDUAL STRAIN; SCANNING INFRARED POLARISCOPE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032300093     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)