Ge-quantum dots on Si(001) tailored by carbon predeposition

Materials Research Society Symposium - Proceedings

Volumn 533, Issue , 1998, Pages 183-189

  Leifeld, O ^a   Grutzmacher, D ^a   Muller, B ^a   Kern, K ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MONOLAYERS; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPUTTER DEPOSITION; SURFACE ROUGHNESS; VACUUM APPLICATIONS;

STEPPED TERRACED DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032298139     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-533-183     Document Type: Conference Paper

References (12)