Modeling emissivity of rough and textured silicon wafers

Journal of Electronic Materials

Volumn 27, Issue 12, 1998, Pages 1341-1346

  Sopori, Bhushan L ^a   Chen, Wei ^a   Abedrabbo, S ^b   Ravindra, N M ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Absorption coefficient; Emissivity; Refractive index; Silicon wafers; Surface roughness

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SOFTWARE; LIGHT ABSORPTION; LIGHT EMISSION; MORPHOLOGY; REFRACTIVE INDEX; SURFACE ROUGHNESS; TEXTURES;

ABSORPTION COEFFICIENT;

SILICON WAFERS;

EID: 0032297628     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0094-3     Document Type: Article

References (14)

1. B.L. Sopori, Laser Focus 34, 159, Feb. (1998).
2. H.O. McMahon, J. Opt. Soc. Amer. 40, 376 (1950).
3. P. Vandenabeele and K. Maex, J. Appl. Phys. 72 (12), 5867 (1992).
4. B.L. Sopori and W. Chen, to be published.
5. B.L. Sopori and T. Marshall, Proc. 23rd IEEE Photovoltaic Specialists Conf. (New York: IEEE, 1993).
6. Handbook of Optical Constants of Solids, ed. Edward Palik (New York: Academic Press, 1985), p. 547.
7. N.M. Ravindra, W. Chen, F.M. Tong and A. Nanda, Transient Thermal Processing in Electronic Materials, ed. N.M. Ravindra and R.K. Singh, (Warrendale, PA: TMS, 1996), p. 159.
8. H.H. Li, J. Phys. Chem. Ref. Data 9, 561 (1980).
9. G.E. Jellison and F.A. Modine, J. Appl. Phys. 76 (6), 3758 (1994).
10. G.E. Jellison and D.H. Lowndes, Appl. Phys. Lett. 41 (7), 594 (1982).
11. T.S. Moss, Optical Properties of Semiconductors, (Butterworths Scientific, 1959).
12. T. Sato, Jpn. J. Appl. Phys. 6 (3), 339 (1967).
13. In comparing our data with the Fig. 3 of Ref. 12, we found some errors. These errors have been corrected in our Fig. 3.
14. B.L. Sopori, J. Madjdpour, B. von Roedern, W. Chen and S.S. Hegedus, Symp. on Amorphous and Microcrystalline Silicon Technology, 467, (Pittsburgh, PA: Mater. Res. Soc., 1997), p. 777.