Supersonic jet epitaxy of silicon carbide on silicon using methylsilane

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2321-2327

  Ustin, S A ^a   Long, C ^a   Ho, W ^a  

^a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING SILICON; SILANES; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

METHYLSILANES; SUPERSONIC JET EPITAXY (SJE);

SEMICONDUCTING FILMS;

EID: 0032297105     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00233-0     Document Type: Article

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