Modification of CdTe-HgTe defect substructure and carrier concentration by laser irradiation

Journal of Crystal Growth

Volumn 194, Issue 3-4, 1998, Pages 317-320

  Zaginey, A ^a   Kotlyarchuk, B ^a   Savitsky, V ^b   Storchun, O ^b   Pysarevsky, V ^b  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b INSTITUTE OF APPLIED PHYSICS   (Ukraine)

Author keywords

Carrier; Defect; Gettering; Laser; Modification; Substructure

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; LASER BEAM EFFECTS; MERCURY COMPOUNDS;

DEFECT SUBSTRUCTURE; STRUCTURE DEFECTS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032296803     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00720-9     Document Type: Article

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