|
Volumn , Issue , 1998, Pages 395-398
|
20 Gbit/s modulation of 1.55 μm compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
a a a a a a a a a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
BANDWIDTH;
CURRENT DENSITY;
LIGHT EXTINCTION;
LIGHT MODULATION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
INDIUM ALUMINUM GALLIUM ARSENIDE;
SOLID SOURCE MOLECULAR BEAM EPITAXY;
THRESHOLD CURRENT;
QUANTUM WELL LASERS;
|
EID: 0032296139
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
|
References (7)
|