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Volumn 3316, Issue 2, 1998, Pages 1157-1160
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Size dependence of electrical resistivity and energy band gap of semiconducting (Bi0.4Sb0.6)2Te3 thin films
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
COMPUTATIONAL METHODS;
ELECTRIC CONDUCTIVITY MEASUREMENT;
ENERGY GAP;
EVAPORATION;
LIGHT ABSORPTION;
MATHEMATICAL MODELS;
SEMICONDUCTING BISMUTH COMPOUNDS;
THERMAL EFFECTS;
THIN FILMS;
BISMUTH ANTIMONIDE TELLURIDE;
CLASSICAL SIZE EFFECT;
EFFECTIVE MEAN FREE PATH MODEL;
FLASH EVAPORATION;
QUANTUM SIZE EFFECT;
SEMICONDUCTING FILMS;
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EID: 0032296114
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (11)
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