Low temperature formation of C54 TiSi2 bypassing the C49 phase: effect of Si crystallinity, metallic impurities and applications to 0.10 μm CMOS

Materials Research Society Symposium - Proceedings

Volumn 514, Issue , 1998, Pages 201-206

  Kittl, J A ^a   Gribelyuk, M A ^a   Samavedam, S B ^a   Hong, Q Z ^a   Yu, N ^a   Rodder, M ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CMOS INTEGRATED CIRCUITS; GROWTH (MATERIALS); LOW TEMPERATURE PROPERTIES; NUCLEATION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC IMPURITIES; RAPID THERMAL PROCESSING;

TITANIUM COMPOUNDS;

EID: 0032295109     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-514-201     Document Type: Conference Paper

References (5)