Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO2 dielectric cap

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3547, Issue , 1998, Pages 319-323

  Lee, L H ^a   Ooi, B S ^a   Lam, Y L ^a   Chan, Y C ^a   Kam, C H ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ENERGY GAP; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICA; SOL-GELS;

QUANTUM WELL INTERMIXING;

INTEGRATED OPTOELECTRONICS;

EID: 0032294969     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.319645     Document Type: Conference Paper

References (6)