Effect of oxygen, nitrogen and hydrogen plasma processing on palladium doped tin oxide thick film gas sensors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3316, Issue 1, 1998, Pages 526-528

  Srivastava, Roopali ^a   Dwivedi, R ^a   Srivastava, S K ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; GAS ADSORPTION; GRAIN BOUNDARIES; HIGH TEMPERATURE PROPERTIES; MICROSTRUCTURE; PALLADIUM; PLASMA DENSITY; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STOICHIOMETRY; THICK FILMS;

SCHOTTKY PROCESS; TIN OXIDE THICK FILM GAS SENSORS;

MOS DEVICES;

EID: 0032292573     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)