Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

IEEE Electron Device Letters

Volumn 19, Issue 12, 1998, Pages 472-474

  Takanashi, Yoshifumi ^a,b   Takahata, Kiyoto ^a   Muramoto, Yoshifumi ^a  

^a NTT CORPORATION   (Japan)

^b IEEE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; IMPACT IONIZATION; LASER APPLICATIONS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

DRAIN CURRENTS; KINK EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032291687     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.735750     Document Type: Article

References (15)

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