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Volumn 37, Issue 12, 1998, Pages 6446-6450
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Degradation of photoluminescence and electron paramagnetic defects in naturally oxidized or oxygen-implanted porous silicon with electron spin resonance imaging
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Author keywords
Anodizing; Dangling bond; Electron paramagnetic resonance; Electron spin resonance; EPR; Imaging; Ion implantation; Oxygen; Pb center; Porous silicon
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Indexed keywords
ANODIC OXIDATION;
CHARGE COUPLED DEVICES;
CHEMICAL BONDS;
COMPOSITION EFFECTS;
CRYSTAL DEFECTS;
DENSITY (OPTICAL);
ELECTRON SPIN RESONANCE SPECTROSCOPY;
ION IMPLANTATION;
OXYGEN;
PARAMAGNETIC RESONANCE;
PHOTOLUMINESCENCE;
SCANNING ELECTRON MICROSCOPY;
HOLE CENTERS;
POROUS SILICON;
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EID: 0032291365
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.6446 Document Type: Article |
Times cited : (5)
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References (11)
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