Investigation of temperature distribution in power GaAs transistors using spatially resolved photoluminescence mapping compared with full thermal modeling

Proceedings of the 1998 4th International Workshop on Thermal Investigations of ICs and Microstructures

Volumn , Issue , 1998, Pages 221-226

  Landesman, J P ^a   Martin, E ^a   Gautier, T ^a   Braun, P ^a   Assouad, Y ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE DISTRIBUTION; THREE DIMENSIONAL;

FULL THERMAL MODELING; PHOTOLUMINESCENCE MAPPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032291360     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)