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Volumn 500, Issue , 1998, Pages 119-124
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Anodic oxidation of nitrogen-added Al-based alloys for thin-film transistors
a
a
IBM JAPAN LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM ALLOYS;
ANNEALING;
ANODIC OXIDATION;
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
ELECTRIC PROPERTIES;
HIGH TEMPERATURE EFFECTS;
LEAKAGE CURRENTS;
MORPHOLOGY;
NITROGEN;
PERMITTIVITY MEASUREMENT;
THICKNESS MEASUREMENT;
ALUMINUM GADOLINIUM ALLOYS;
NEGATIVE BIAS;
THIN FILM TRANSISTORS;
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EID: 0032290970
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (9)
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