FT-raman studies of charged defects created on methyl end-capped oligothiophenes by doping with NOBF4

Advanced Materials

Volumn 10, Issue 17, 1998, Pages 1458-1461

  Casado, Juan ^a   Hernández, Víctor ^a   Hotta, Shu ^b   López Navarrete, Juan T ^a  

^a UNIVERSITY OF MÁLAGA   (Spain)

^b Matsushita Research Institute Tokyo Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEFECTS; DOPING (ADDITIVES); MOLECULAR STRUCTURE; NITROGEN COMPOUNDS; RAMAN SPECTROSCOPY; SULFUR COMPOUNDS;

CONJUGATION COORDINATION THEORY; FOURIER TRANSFORM-RAMAN SPECTROSCOPY (FT-RS); OLIGOTHIOPHENES;

OLIGOMERS;

EID: 0032290508     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4095(199812)10:17<1458::AID-ADMA1458>3.0.CO;2-W     Document Type: Article

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