Improved electrical properties on the anodic oxide/InP interface for MOS structures

Journal of Electronic Materials

Volumn 27, Issue 12, 1998, Pages 1358-1361

  Sumathi, R R ^a   Dharmarasu, N ^a   Arulkumaran, S ^a   Jayavel, P ^a   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

BCA; Indium phosphide; Metal oxide semiconductor (MOS); Polishing; Surface states

Indexed keywords

ANNEALING; ANODIC OXIDATION; POLISHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE STATE DENSITY;

MOSFET DEVICES;

EID: 0032289801     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0097-0     Document Type: Article

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