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Volumn 170, Issue 2, 1998, Pages 259-263

Reflectance study of Al0.4Ga0.6Sb/GaSb single quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; REFLECTION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THICKNESS MEASUREMENT;

EID: 0032289753     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199812)170:2<259::AID-PSSA259>3.0.CO;2-B     Document Type: Article
Times cited : (2)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.