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Volumn 170, Issue 2, 1998, Pages 259-263
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Reflectance study of Al0.4Ga0.6Sb/GaSb single quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSITIONS;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
OPTICAL VARIABLES MEASUREMENT;
REFLECTION;
RELIABILITY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
THICKNESS MEASUREMENT;
CONDUCTION SUBBAND LEVEL;
OPTICAL TRANSITIONS;
QUANTUM STATES;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0032289753
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199812)170:2<259::AID-PSSA259>3.0.CO;2-B Document Type: Article |
Times cited : (2)
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References (13)
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