In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs

Materials Research Society Symposium - Proceedings

Volumn 514, Issue , 1998, Pages 455-460

  Caldwell, D A ^a   Chen, L C ^a   Bensaoula, A H ^a   Farrer, J K ^a   Carter, C B ^a   Palmstrom, C J ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHASE DIAGRAMS; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

IN SITU REGROWTH; PHASE FORMATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032289143     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)