Effect of growth conditions on Si doping into InAlAs grown by metal-organic vapor phase epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 119-122

  Goto, S ^a   Ueda, T ^a   Ohshima, T ^a   Kakinuma, H ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

HALL CARRIER CONCENTRATION; IONIZED IMPURITY CONCENTRATION;

SEMICONDUCTOR DOPING;

EID: 0032288809     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)